Optical Testing of Semiconductor Devices Under High  Energy Pulses: Advanced Optical Interferometric Methods for Nanosecond Mapping of Semiconductor Devices Under High Energy Pulses - Viktor Dubec - Kirjat - Suedwestdeutscher Verlag fuer Hochschuls - 9783838104041 - tiistai 3. maaliskuuta 2009
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Optical Testing of Semiconductor Devices Under High Energy Pulses: Advanced Optical Interferometric Methods for Nanosecond Mapping of Semiconductor Devices Under High Energy Pulses

Viktor Dubec

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Optical Testing of Semiconductor Devices Under High Energy Pulses: Advanced Optical Interferometric Methods for Nanosecond Mapping of Semiconductor Devices Under High Energy Pulses

For optimisation of devices and verification of device simulation models the knowledge of heat dissipation and of free carrier concentration in the device is essential. Non-destructive optical methods based on monitoring of the refractive index, absorption or light emission have previously been developed for investigation of transient temperature or free carrier changes. However, these methods suffer either from small spatial or time resolution. Therefore two testing techniques based on transient interferometric mapping have been developed within this thesis: a two-dimensional multiple-time-instant single-shot technique and a two-beam technique with sub-nanosecond time resolution.

Media Kirjat     Paperback Book   (Kirja pehmeillä kansilla ja liimatulla selällä)
Julkaisupäivämäärä tiistai 3. maaliskuuta 2009
ISBN13 9783838104041
Tuottaja Suedwestdeutscher Verlag fuer Hochschuls
Sivujen määrä 160
Mitta 256 g
Kieli German